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Mon, January 26, 2009

Industry?s Highest Power, Integrated PoE-PD Controllers from ON Semiconductor Meet Upcoming IEEE PoE+ Standard


Published on 2009-01-26 09:17:03, Last Modified on 2009-01-26 09:18:09 - Market Wire
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PHOENIX--([ BUSINESS WIRE ])--ON Semiconductor (Nasdaq:ONNN), a leading global supplier of high performance, energy efficient, silicon solutions, has announced that its NCP1081 and NCP1083 integrated Power-over-Ethernet Powered Device (PoE-PD) / DC-DC converter controllers have been verified to meet the upcoming IEEE802.3at standard for high power communications applications. Both devices have not only passed the IEEE 802.3af standard tests but have also been verified by the University of New Hampshire Interoperability Laboratory (UNH-IOL) for the recent draft IEEE 802.3at (D3.1) standard - which includes a test of the two event physical layer classification. The UNH tests confirm that these devices can enable PoE+ compliant platforms on the market, and are in line with the evolving high power requirements of the WLAN access point, WIMAX, industrial and IP camera markets.

"Future changes to the IEEE802.3at standard that could result in PoE-PD silicon changes are not anticipated," said Koen Geirnaert, ON Semiconductor's PoE-PD product marketing manager. "As such, the NCP1081 and NCP1083 are expected to be in line with the final IEEE802.3at standard. These devices will enable the industry's first movers to deliver standard PoE+ based platforms to the market."

Device Features

ON Semiconductor's portfolio of integrated PoE-PD products contains four devices. The NCP1081 and NCP1083 provide power levels up to 25.5 watts (W) for applications in line with the draft IEEE 802.3at (D3.1) standard and up to 40 W for proprietary high power PoE applications. The NCP1080 and NCP1082 offer IEEE802.3af compliant power levels. The NCP1082 and NCP1083 are also capable of providing power via an auxiliary parallel supply.

The NCP1080/1/2/3 are pin-compatible and offered in a TSSOP-EP 20 pin package. This feature allows the customer to easily mix-and-match different PoE capabilities on different platforms.

The PoE-PD portfolio utilizes ON Semiconductor's automotive qualified, high-voltage SmartPower process to provide superior cable electrostatic discharge (CESD) and surge protection levels compared to other integrated PoE-PD /DC-DC converter controllers. Low on-resistance (Ron) and extended temperature range from -40°C to 85°C with full operation up to 150°C junction temperature allows these PoE-PD controllers to achieve record power levels while operating in harsh environments.

Pricing and Availability

All NCP1081/2/3/4 devices are currently available. The per unit prices for quantities of 1,000 and above are $1.45 USD for the NCP1080, $1.48 USD for the NCP1082, $1.80 USD for the NCP1081, and $1.85 USD for the NCP1083. NCP1081/3 evaluation boards are available for $150. For more information, please contact your local sales representative at [ www.onsemi.com ].

About ON Semiconductor

With its global logistics network and strong product portfolio, ON Semiconductor (NASDAQ:ONNN) is a preferred supplier of high performance, energy efficient, silicon solutions to customers in the power supply, automotive, communication, computer, consumer, medical, industrial, mobile phone, and military/aerospace markets. The company's broad portfolio includes power, analog, DSP, mixed-signal, advance logic, clock management, non-volatile memory and standard component devices. Global corporate headquarters are located in Phoenix, Arizona. The company operates a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions. For more information, visit [ http://www.onsemi.com ].

ON Semiconductor and the ON Semiconductor logo are registered trademarks of Semiconductor Components Industries, LLC. All other brand and product names appearing in this document are registered trademarks or trademarks of their respective holders. Although the company references its Web site in this news release, such information on the Web site is not to be incorporated herein.

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