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Next-gen MRAM could replace DRAM chips in your next computer

The article from MSN discusses the potential of next-generation Magnetoresistive Random Access Memory (MRAM) to replace Dynamic Random Access Memory (DRAM) in future computers. MRAM offers several advantages over traditional DRAM, including non-volatility, which means it retains data even when power is turned off, faster read/write speeds, and lower power consumption. Researchers at the University of Cambridge have developed a new type of MRAM that uses a three-atom-thick layer of vanadium dioxide, which can switch between insulating and conducting states, enhancing the memory's performance. This innovation could lead to computers that boot instantly, have higher endurance, and consume less energy. The development is still in the research phase, but if commercialized, it could significantly impact the memory market, potentially phasing out DRAM due to MRAM's superior attributes.

Read the Full MSN Article at:
[ https://www.msn.com/en-us/technology/hardware-and-devices/next-gen-mram-could-replace-dram-chips-in-your-next-computer/ar-AA1yuhLY ]