N🟁N

Vishay Intertechnology, Inc.: Vishay Siliconix TrenchFET(R) Gen III Power MOSFETs Honored With EN-Genius Product of the Year Aw

  //science-technology.news-articles.net/content/2 .. nored-with-en-genius-product-of-the-year-aw.html
  Published in Science and Technology on Wednesday, April 1st 2009 at 9:00 GMT, Last Modified on 2009-11-03 09:07:20 by Market Wire
          ^{🞛 This publication is a summary or evaluation of another publication}

MALVERN, PA--(Marketwire - April 1, 2009) - Vishay Intertechnology, Inc. (NYSE: [ VSH ]) today announced that devices in its new TrenchFET® Gen III power MOSFET family have won a Product of the Year award from EN-Genius Network ([ www.en-genius.net ]), a leading information source for electronic design engineers.

Being honored with the EN-Genius award for Best Improvement in Power Devices are a group of TrenchFET Gen III devices that are the first to offer TurboFET™ technology, which utilizes a new charge-balanced drain structure to help notebook computers, servers, and other systems use energy and/or circuit board space more efficiently.

"The reduction in gate charge in these third-generation parts is significant and will allow a lot of existing designs to migrate to higher switching frequencies, maintaining efficiency while reducing the real estate used by circuit passives -- or by increasing efficiency at the presently used switching frequencies of those designs," EN-Genius said.

Recipients of the EN-Genius 2008 Product of the Year Awards were selected by Paul McGoldrick, EN-Genius editor-in-chief, and his editorial colleagues Lee Goldberg and Alex Mendelsohn, from products reviewed by the publication throughout the year.

Vishay's TurboFET technology enables devices with an industry-leading combination of low on-resistance, which translates into lower conduction losses, and low gate charge. For MOSFETs in dc-to-dc converters, lower gate charge translates into more efficient switching, helping to save power in notebook computers, voltage regulator modules (VRMs), servers, and other systems using point-of-load (POL) power conversion. It also gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components.

 Links to TurboFET product datasheets: [ http://www.vishay.com/doc?68799 ] (SiS426DN) [ http://www.vishay.com/doc?68859 ] (SiR496DP) [ http://www.vishay.com/doc?68698 ] (Si7718DN) [ http://www.vishay.com/doc?68795 ] (Si7784DP) 

Samples and production quantities of the new TrenchFET Gen III power MOSFETs with TurboFET technology are available now, with lead times of 10 to 12 weeks for large orders.

Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, transistors, and optoelectronics and selected ICs) and passive electronic components (resistors, capacitors, inductors, sensors, and transducers). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Its product innovations, successful acquisition strategy, and ability to provide "one-stop shop" service have made Vishay a global industry leader. Vishay can be found on the Internet at [ http://www.vishay.com ].

TrenchFET is a registered trademark of Siliconix incorporated. TurboFET is a trademark of Siliconix incorporated.