Science & Technology
Science and Technology
Science and Technology
Mon, January 19, 2009
Sat, January 17, 2009
Fri, January 16, 2009
MoSys to Announce Fourth Quarter and Full Year 2008 Financial Results on February 9, 2009
SUNNYVALE, Calif.--([ BUSINESS WIRE ])--MoSys, Inc. (NASDAQ: MOSY), a leading provider of high-density system-on-chip (SoC) memory intellectual property (IP), today announced it would release its fourth quarter and full year 2008 financial results on Monday, February 9, 2009, after the market closes. Following the release, Len Perham, MoSys' President and Chief Executive Officer, and Jim Sullivan, Chief Financial Officer, will host a live audio Webcast and conference call at 4:30 p.m. Eastern Time (1:30 p.m. Pacific Time).
Fourth Quarter and Fiscal Year 2008 Conference Call/Webcast Information:
To access the call, please dial 1-888-679-8033 and enter the pass code 14111930 at least 10 minutes prior to the start of the call.
Date: Monday, February 9, 2009 |
Time: 4:30 p.m. Eastern Time (1:30 p.m. Pacific Time) |
Conference Call Number: 1-888-679-8033 |
| International Call Number: 1-617-213-4846 |
Pass Code: 14111930 |
The conference call replay will be available for 48 hours, beginning two hours after the call. The replay number is 1-888-286-8010 with a pass code of 52745907. International callers should dial 1-617-801-6888 and enter the same pass code at the prompt.
In addition, the live audio conference call and replay will be available on the investor relations section of the Company's Web site at [ http://www.mosys.com ].
One may also pre-register their attendance for the conference call, which will enable immediate entry into the call. To pre-register please go to: [ https://www.theconferencingservice.com/prereg/key.process?key=PPANT8EV6 ]
About MoSys, Inc.
Founded in 1991, MoSys (NASDAQ: MOSY), develops, markets and licenses innovative embedded memory intellectual property (IP) technologies for advanced SoCs used in a variety of home entertainment, mobile consumer, networking and storage applications. MoSys' patented 1T-SRAM and 1T-FLASH technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. MoSys' embedded memory IP has been included in more than 160 million devices demonstrating silicon-proven manufacturability in a wide range of processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available on MoSys' website at [ http://www.mosys.com ].
MoSys and 1T-SRAM are registered trademarks of MoSys, Inc. 1T-FLASH(TM) is a trademark of MoSys, Inc.
