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IXYS Colorado Announces Release of New RF Switching Module

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^{Published in Science and Technology on Tuesday, September 21st 2010 at 5:40 GMT by Market Wire}  

FORT COLLINS, Colo.--([ BUSINESS WIRE ])--IXYS Corporation (NASDAQ:IXYS), a leader in power semiconductors for power conversion and motion control applications, announced today that its IXYSRF division has released the latest addition to their a4DFa line of integrated driver/MOSFET RF Power Modules. The IXZ421DF12N100 utilizes the same IXYSRF driver IC found in the popular DEIC421 and a 1000V 12A MOSFET in combination to provide users an RF switching module with improved performance, reduced overall part counts and smaller footprint compared to traditional discrete devices.

"By utilizing the 421 driver IC we have been able to simplify the drive requirements for the module while maintaining the excellent RF power performance achieved through the integration of the driver and MOSFET combined with the isolated DCB based, high efficiency RF Package for which IXYSRF is known"

Similar to IXYSa™ other RF Power Modules the IXZ421DF12N100 can be operated up to switching frequencies of 30MHz in class D and E RF applications.

aBy utilizing the 421 driver IC we have been able to simplify the drive requirements for the module while maintaining the excellent RF power performance achieved through the integration of the driver and MOSFET combined with the isolated DCB based, high efficiency RF Package for which IXYSRF is known,a said Stephen Krausse, General Manager of IXYSRF.

The IXZ421DF12N100 contains a 12A, 1000V MOSFET coupled with the DEIC421 driver IC for short propagation delays and accurate switching thresholds. By integrating both the driver and MOSFET into a single package, stray inductance is minimized between the driver and the gate of the MOSFET thereby allowing for greater efficiency. The DEIC421 driver die has been designed with low propagation delays, fast switching and high drive current. The driver section can be operated from 10V to 18V and features Kelvin ground connections that virtually eliminate false triggering. Rise and fall times of less than 4 ns have been observed into a 50-ohm load making the part useful for high power, short pulse and switching applications. The low capacitance of the 12N100 MOSFET die reduces required drive current and improves the modulea™s efficiency.

The SMD package of the IXZ421DF12N100 is a robust high power package, with excellent thermal performance, electrical isolation, and excellent thermal power cycling capability, outperforming the common ceramic and more expensive hermetic RF packages.

With the IXZ421DF12N100, customers can expect higher efficiency, lower overall cost, improved switching performance, smaller size and reduced part count for both high speed switching applications as well as class D and E RF applications.

TheIXZ421DF12N100 is available directly from IXYSRF (IXYS Colorado) Tel. (970) 493-1901, Fax (970) 493-1903, Email [ sales@ixyscolorado.com ], [ www.ixyscolorado.com ] or through your local authorized IXYS/IXYSRFsales representative.

About IXYS Corporation

Since its inception in 1983, IXYS Corporation has been developing technology-driven products to improve power conversion efficiency, generate solar and wind power and provide efficient motor control for industrial applications.

IXYS, and its subsidiary companies, offer a diversified product base that addresses worldwide needs for power control, electrical efficiency, renewable energy, telecommunications, medical devices, flexible displays and RF power. For more information, visit [ www.ixys.com ].

Safe Harbor Statement

Any statements contained in this press release that are not statements of historical fact, including the performance, rating, reliability and suitability of products for various applications, may be deemed to be forward-looking statements. There are a number of important factors that could cause the results of IXYS to differ materially from those indicated by these forward-looking statements, including, among others, risks detailed from time to time in the Company's SEC reports, including its Quarterly Report on Form 10-Q for the quarter ended June 30, 2010. The Company undertakes no obligation to publicly release the results of any revisions to these forward-looking statements.