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FORT COLLINS, Colo.--([ BUSINESS WIRE ])--IXYS Corporation (NASDAQ:IXYS), a leader in power semiconductors for power conversion and motion control applications, announced today the introduction of the IXZ421DF18N50 RF Power Module by its [ IXYS Colorado ] division.

"By utilizing the DEIC421 driver IC we have been able to simplify the drive requirements for the module while maintaining the excellent RF power performance achieved through the integration of the driver and MOSFET combined with the isolated DCB based, high efficiency RF Package for which IXYSRF is known"

The IXZ421DF18N50 combines the popular DEIC421 gate driver IC with the ZMOS low capacitance 500V, 19A MOSFET to provide users with an RF switching module that enhances performance and simplifies design through reduced parasitic, smaller footprint and lower part count when compared with traditional discrete devices. The IXZ421DF18N50 can be operated at switching frequencies up to 30MHz and utilized in class D and E applications.

IXZ421DF18N50 Features:

• MOSFET/Driver RF Power Module a" the IXZ421DF18N50 contains a 500V, 19A MOSFET coupled with the DEIC421 driver IC.
• DC to 30MHz operation a" the IXZ421DF18N50 is designed for use from DC to 30MHz for a wide variety of both switch mode and RF applications.
• Ideal for Class D and E RF applications a" incorporating both the driver and MOSFET into the module reduces stray inductance and results in greater overall efficiency.
• Fast rise and fall times a" the combination of high speed driver & MOSFET along with the DE475 high performance package makes the IXZ421DF18N50 an excellent choice for high power, short pulse and switching applications.
• Hybrid RF MOSFET/driver module a" the RF power module reduces part count; provides for easier layout of RF power circuitry and minimizes parasitic circuit elements.
• Kelvin ground connections a" aids in eliminating false triggering.
• Robust high power package a" the IXZ421DF18N50 utilizes the low thermal impedance and isolated substrate of the DE475 package for improved power density.
• RoHS compliant a" All IXYSRF devices are compliant with the RoHS standard and BeO free.

aBy utilizing the DEIC421 driver IC we have been able to simplify the drive requirements for the module while maintaining the excellent RF power performance achieved through the integration of the driver and MOSFET combined with the isolated DCB based, high efficiency RF Package for which IXYSRF is known,a said Stephen Krausse, General Manager of IXYSRF.

Applications

• Class D switch mode
• Class E RF generators
• High speed, high voltage pulse generators
• Laser diode drivers
• Multi-MHz switch mode power supplies (SMPS)

With the IXZ421DF18N50, customers can expect higher efficiency, lower overall cost, improved switching performance, smaller size and reduced part count for both high speed switching and class D and E RF applications.

TheIXZ421DF18N50 is available directly from IXYS Colorado (Directed Energy) Tel. (970) 493-1901, Fax (970) 232-3025, Email [ sales@ixyscolorado.com ], [ www.ixyscolorado.com ] or through your local authorized IXYS/IXYSRF sales representative.

About IXYS Corporation

Since its inception in 1983, IXYS Corporation has been developing technology-driven products to improve power conversion efficiency, generate solar and wind power and provide efficient motor control for industrial applications.

IXYS, and its subsidiary companies, offer a diversified product base that addresses worldwide needs for power control, electrical efficiency, renewable energy, telecommunications, medical devices, flexible displays and RF power. For more information, visit [ www.ixys.com ].

Safe Harbor Statement

Any statements contained in this press release that are not statements of historical fact, including the performance, rating, reliability and suitability of products for various applications, may be deemed to be forward-looking statements. There are a number of important factors that could cause the results of IXYS to differ materially from those indicated by these forward-looking statements, including, among others, risks detailed from time to time in the Company's SEC reports, including its report on Form 10-Q for the quarter ended September 30, 2011. The Company undertakes no obligation to publicly release the results of any revisions to these forward-looking statements.