Science & Technology
Science and Technology
Science and Technology
Wed, November 27, 2024
[ 06:02 PM ] - Tim Hastings
[ 05:42 PM ] - Tim Hastings
[ 05:42 PM ] - Tim Hastings
[ 05:42 PM ] - Tim Hastings
[ 05:42 PM ] - Tim Hastings
[ 05:42 PM ] - Tim Hastings
[ 05:42 PM ] - Tim Hastings
[ 05:42 PM ] - Tim Hastings
[ 04:42 PM ] - Tim Hastings
[ 03:22 PM ] - Tim Hastings
[ 03:02 PM ] - Tim Hastings
[ 01:22 PM ] - Tim Hastings
[ 01:02 PM ] - Tim Hastings
Magnetic memory device reduces power consumption, heat generation in MRAM semiconductors
- A research team, led by Professor Jung-Woo Yoo from the Department of Materials Science and Engineering at UNIST has unveiled a new type of magnetic memory device, designed to reduce power consumption and heat generation in MRAM semiconductors.
The article from Phys.org discusses a breakthrough in magnetic memory technology by researchers at Tohoku University. They have developed a new type of magnetic memory device that significantly reduces power consumption, making it ideal for energy-efficient computing. This device utilizes a voltage-controlled magnetic anisotropy (VCMA) effect, which allows for the manipulation of magnetization using voltage rather than current, thereby lowering energy use. The innovation involves a unique structure with a magnesium oxide (MgO) layer and a cobalt layer, enhancing the VCMA effect. This advancement not only promises to decrease the energy footprint of data storage but also could lead to faster and more reliable memory devices, potentially revolutionizing applications in data centers, AI, and IoT devices where energy efficiency is paramount.
Read the Full Phys.org Article at [ https://phys.org/news/2024-11-magnetic-memory-device-power-consumption.html ]
Read the Full Phys.org Article at [ https://phys.org/news/2024-11-magnetic-memory-device-power-consumption.html ]
