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Magnetic memory device reduces power consumption, heat generation in MRAM semiconductors

The article from Phys.org discusses a breakthrough in magnetic memory technology by researchers at Tohoku University. They have developed a new type of magnetic memory device that significantly reduces power consumption, making it ideal for energy-efficient computing. This device utilizes a voltage-controlled magnetic anisotropy (VCMA) effect, which allows for the manipulation of magnetization using voltage rather than current, thereby lowering energy use. The innovation involves a unique structure with a magnesium oxide (MgO) layer and a cobalt layer, enhancing the VCMA effect. This advancement not only promises to decrease the energy footprint of data storage but also could lead to faster and more reliable memory devices, potentially revolutionizing applications in data centers, AI, and IoT devices where energy efficiency is paramount.

Read the Full Phys.org Article at [ https://phys.org/news/2024-11-magnetic-memory-device-power-consumption.html ]