Sun, December 1, 2024
Sat, November 30, 2024
Fri, November 29, 2024
Thu, November 28, 2024
[ Thu, Nov 28th 2024 ]: Tim Hastings
Lightning in a seed bottle
Wed, November 27, 2024
[ Wed, Nov 27th 2024 ]: Tim Hastings
ODNR opens internship window
Tue, November 26, 2024
Mon, November 25, 2024
Sun, November 24, 2024
Tue, November 12, 2024
Tue, May 16, 2017
Mon, May 8, 2017
Fri, March 31, 2017
Wed, March 8, 2017
Wed, January 25, 2017
Thu, October 6, 2016
Wed, October 5, 2016
Tue, October 4, 2016
Mon, October 3, 2016
Fri, September 30, 2016
Thu, September 29, 2016
Tue, September 27, 2016
Mon, September 26, 2016
Sun, September 25, 2016
Fri, September 23, 2016
Thu, September 22, 2016
Wed, September 21, 2016
Tue, September 20, 2016
Mon, September 19, 2016
Sun, September 18, 2016
Fri, September 16, 2016
Thu, September 15, 2016
Wed, September 14, 2016
Tue, September 13, 2016
Mon, September 12, 2016
Fri, September 9, 2016
Thu, May 9, 2013

Magnetic memory device reduces power consumption, heat generation in MRAM semiconductors


  Copy link into your clipboard //science-technology.news-articles.net/content/2 .. tion-heat-generation-in-mram-semiconductors.html
  Print publication without navigation Published in Science and Technology on by Tim Hastings
          🞛 This publication is a summary or evaluation of another publication 🞛 This publication contains editorial commentary or bias from the source


  A research team, led by Professor Jung-Woo Yoo from the Department of Materials Science and Engineering at UNIST has unveiled a new type of magnetic memory device, designed to reduce power consumption and heat generation in MRAM semiconductors.

The article from Phys.org discusses a breakthrough in magnetic memory technology by researchers at Tohoku University. They have developed a new type of magnetic memory device that significantly reduces power consumption, making it ideal for energy-efficient computing. This device utilizes a voltage-controlled magnetic anisotropy (VCMA) effect, which allows for the manipulation of magnetization using voltage rather than current, thereby lowering energy use. The innovation involves a unique structure with a magnesium oxide (MgO) layer and a cobalt layer, enhancing the VCMA effect. This advancement not only promises to decrease the energy footprint of data storage but also could lead to faster and more reliable memory devices, potentially revolutionizing applications in data centers, AI, and IoT devices where energy efficiency is paramount.

Read the Full Phys.org Article at [ https://phys.org/news/2024-11-magnetic-memory-device-power-consumption.html ]

Publication Contributing Sources